A Compact Model for Temperature and Frequency Dependence of Spiral Inductor
نویسندگان
چکیده
Spiral inductors fabricated using a 90nm CMOS process have been characterized and analyzed. The extracted series resistance increases with frequency and temperature. The extracted resistance temperature coefficient exhibits a strong dependence on operating frequency. It gradually decreases with frequency and is different from the results using DC temperature coefficients. A single π-model is used to model the measured high frequency characteristics. Two resistors and a transformer are used to model the observed temperature coefficient. One resistor has temperature coefficient around DC value, while the other one is less dependent on temperature and connected through the other side of the transformer. The model shows good fitting to all parameters, such as series resistance, temperature coefficient, inductance, quality factor and s-parameters across a wide frequency range and from room to high temperature. Discussion of process variation and corner models is also given. Keywords— RF, Spiral inductor, Compact Model
منابع مشابه
Microstrip Inductor Design and Implementation
Abstract: Design, simulation, and implementation of microstrip spiral inductors for RF applications at the high frequency (HF) range are given. The simplified lumped element equivalent model parameters for spiral inductor are used to obtain the initial physical dimensions for the design. The spiral inductor is then simulated with planar electromagnetic simulator, Sonnet, using the geometry cons...
متن کاملبررسی پذیرفتاری مغناطیسی AC در ابررساناهای حجمی (Bi-Pb)2223
The temperature dependence of ac susceptibility of (Bi-Pb)2223 polycrystalline samples was measured as a function of frequency and ac field amplitude. Analysis of the temperature dependence of the AC susceptibility near the transition temperature (Tc) has been done employing Bean’s critical state model. The observed variation of intergranular critical current densities (Jc) with temperature i...
متن کاملAn ultra-compact LC-VCO using a stacked-spiral inductor
This paper proposes an ultra compact LC-VCO. Due to the speed-up of CMOS digital circuits, jitter of ring oscillators is becoming a critical problem. Even though an LC-VCO has a better phase noise, a layout size of on-chip inductor is a problem as a clock generator. Thus, the proposed LC-VCO consists of a very compact stacked-spiral inductor and active components placed are beneath the inductor...
متن کاملNoise Coupling in Heavily and Lightly DopedSubstrate from Planar Spiral
Noise Coupling in Heavily and Lightly Doped Substrate from Planar Spiral Inductor Tony Yeung, Alan Pun, Zhiheng Chen, Jack Lau, Fran cois J.R. Cl ement Dept. of Electrical & Electronic Engineering, The Hong Kong University of Science & Technology Center for Integrated Systems, Stanford University, Stanford, CA 94305 Abstract| Recently, much studies have been done to include on-chip inductors fo...
متن کاملFrequency-Independent Equivalent-Circuit Model for On-Chip Spiral Inductors
A wide-band physical and scalable 2equivalent circuit model for on-chip spiral inductors is developed. Based on physical derivation and circuit theory, closed-form formulas are generated to calculate the RLC circuit elements directly from the inductor layout. The 2model accurately captures ( ) and ( ) characteristics beyond the self-resonant frequency. Using frequency-independent RLC elements, ...
متن کامل